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| 2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com * Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A * Excellent Power Dissipation Due to Thermopad Construction - * * * * PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 A Complement to PNP 2N4918, 2N4919, 2N4920 Pb-Free Packages are Available* 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40-80 VOLTS, 30 WATTS MAXIMUM RATINGS IIII I I II IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIII I II I II I I I II IIIIIIIIIIIIIIIIIII I I II II II IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III I I I II IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIII I I I II I II IIIIIIIIIIIIIIIIIIII I I II II I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII Collector-Emitter Voltage 2N4921 2N4922 2N4923 2N4921 2N4922 2N4923 VCEO 40 60 80 40 60 80 Vdc Collector-Emitter Voltage VCB Vdc Emitter Base Voltage VEB IC IB 5.0 1.0 3.0 1.0 Vdc Adc Adc Collector Current - Continuous (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 30 0.24 W mW/_C _C TJ, Tstg -65 to +150 Rating Symbol Value Unit TO-225 CASE 77 STYLE 1 3 21 MARKING DIAGRAM 1 YWW 2 N492xG THERMAL CHARACTERISTICS (Note 2) Characteristic Thermal Resistance, Junction-to-Case Symbol qJC Max Unit 4.16 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements. The 3.0 A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6). 2. Recommend use of thermal compound for lowest thermal resistance. *Indicates JEDEC Registered Data. Y = Year WW = Work Week 2N492x = Device Code x = 1, 2, or 3 G = Pb-Free Package ORDERING INFORMATION Device 2N4921 2N4921G 2N4922 2N4922G 2N4923 2N4923G Package TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) Shipping 500 Units / Box 500 Units / Box 500 Units / Box 500 Units / Box 500 Units / Box 500 Units / Box *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 Preferred devices are recommended choices for future use and best overall value. 1 January, 2006 - Rev. 11 Publication Order Number: 2N4921/D IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIII II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I II I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIII I I I IIII I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII 3. Pulse Test: PW 300 ms, Duty Cycle 2.0%. *Indicates JEDEC Registered Data. SMALL-SIGNAL CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Small-Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Current-Gain - Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (Note 3) (IC = 1.0 Adc, VCE = 1.0 Vdc) Base-Emitter Saturation Voltage (Note 3) (IC = 1.0 Adc, IB = 0.1 Adc) Collector-Emitter Saturation Voltage (Note 3) (IC = 1.0 Adc, IB = 0.1 Adc) DC Current Gain (Note 3) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = Rated VCB, IE = 0) Collector Cutoff Current (VCE = Rated VCEO, VEB(off) = 1.5 Vdc) (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (Note 3) (IC = 0.1 Adc, IB = 0) Characteristic 2N4921, 2N4922, 2N4923 http://onsemi.com 2N4921 2N4922 2N4923 2N4921 2N4922 2N4923 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICBO ICEO IEBO ICEX Cob hFE hfe fT Min 3.0 25 40 30 10 40 60 80 - - - - - - - - - - - MaxIIII Unit 100 - 150 - 1.3 1.3 0.6 1.0 0.1 0.1 0.5 0.5 0.5 0.5 - - - - - mAdc mAdc mAdc mAdc MHz Vdc Vdc Vdc Vdc pF - - 2 2N4921, 2N4922, 2N4923 40 PD, POWER DISSIPATION (WATTS) 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (C) 125 150 Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. APPROX +11 V Vin VBE(off) TURN-ON PULSE t1 VCC Vin RC RB Cjd << Ceb t3 APPROX +11 V Vin APPROX 9.0 V t2 TURN-OFF PULSE SCOPE -4.0 V t1 15 ns 100 < t2 500 ms t3 15 ns DUTY CYCLE 2.0% RB and RC varied to obtain desired current levels Figure 2. Switching Time Equivalent Circuit 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 td VCC = 30 V VCC = 30 V IC/IB = 20 IC/IB = 10, UNLESS NOTED TJ = 25C TJ = 150C VCC = 60 V t, TIME ( s) tr VCC = 60 V VBE(off) = 2.0 V VCC = 30 V VBE(off) = 0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1000 Figure 3. Turn-On Time http://onsemi.com 3 2N4921, 2N4922, 2N4923 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE P(pk) qJC(t) = r(t) qJC qJC = 4.16C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 TJ = 150C dc IC, COLLECTOR CURRENT (AMP) 5.0 ms 1.0 ms 100 ms 0.2 0.1 1.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C PULSE CURVES APPLY BELOW RATED VCEO 2.0 3.0 5.0 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active-Region Safe Operating Area 5.0 3.0 2.0 t s, STORAGE TIME ( s) 1.0 0.7 0.5 0.3 0.2 IC/IB = 10 IC/IB = 20 t f, FALL TIME ( s) IC/IB = 20 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 IC/IB = 10 TJ = 25C TJ = 150C VCC = 30 V IB1 = IB2 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1000 IC/IB = 20 0.1 0.07 0.05 TJ = 25C TJ = 150C IB1 = IB2 ts = ts - 1/8 tf 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1000 0.1 0.07 0.05 Figure 6. Storage Time Figure 7. Fall Time http://onsemi.com 4 2N4921, 2N4922, 2N4923 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 2.0 3.0 5.0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) 1000 2000 TJ = 150C 25C -55 C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.8 IC = 0.1 A 0.25 A 0.5 A 1.0 A VCE = 1.0 V 0.6 TJ = 25C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA) 50 100 200 Figure 8. Current Gain RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) Figure 9. Collector Saturation Region 108 IC = 10 x ICES 107 106 IC ICES 105 104 103 ICES VALUES OBTAINED FROM FIGURE 12 0 30 60 90 120 150 VOLTAGE (VOLTS) IC = 2 x ICES VCE = 30 V 1.5 TJ = 25C 1.2 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 VCE(sat) @ IC/IB = 10 0 10 20 30 50 2.0 3.0 5.0 100 200 300 500 1000 2000 TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR CURRENT (mA) Figure 10. Effects of Base-Emitter Resistance Figure 11. "On" Voltage 104 TEMPERATURE COEFFICIENTS (mV/C) IC, COLLECTOR CURRENT ( A) 103 102 101 100 10-1 10- 2 -0.2 REVERSE -0.1 0 +0.1 FORWARD +0.2 +0.3 +0.4 +0.5 IC = ICES VCE = 30 V TJ = 150C 100C 25C +2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 2.0 3.0 5.0 10 qVB FOR VBE 20 30 50 100 200 300 500 1000 2000 *qVC FOR VCE(sat) -55 C to +100C *APPLIES FOR IC/IB hFE @ VCE + 1.0 V 2 TJ = 100C to 150C VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 12. Collector Cut-Off Region Figure 13. Temperature Coefficients http://onsemi.com 5 2N4921, 2N4922, 2N4923 PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U Q F M C -A- 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M M A M B M B M DIM A B C D F G H J K M Q R S U V STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 2N4921/D |
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